MtronPTI組件和子組件設計和測試能力XO5082-020SR
來源：http://m.sdyoujian.cn 作者：億金電子 2024年04月11
MtronPTI組件和子組件設計和測試能力XO5082-020SR
MtronPTI高功率處理空間級組件和子組件設計和測試能力
MtronPTI在衛星平臺和載人飛船方面獲得了超過125項設計勝利。憑借支持低地球軌道、中地球軌道和地球同步軌道應用的專業知識，MtronPTI進口晶振公司擁有一支成熟的團隊和久經考驗的記錄，可以滿足苛刻的空間要求。
隨著對高功率空間級發射機需求的不斷發展，高功率處理空間級射頻組件和子組件對任務的成功至關重要。由于多重放電等現象，這些在軌道衛星上使用的設備的性能與它們在海平面上的性能有很大不同。一些空間級應用既要求在外層空間的連續運行性能，也要求在進入空間期間的性能，即在溫度范圍內經歷從環境壓力到1×10-5托的壓力變化以避免電暈放電。了解進入太空和在軌期間大功率處理射頻組件和子組件的能力對于成功的太空任務至關重要。在早期階段檢測潛在風險可以防止災難性故障。
除了現有的內部測試能力之外1為了測試空間級組件和射頻組件，MtronPTI石英晶振公司投資了Spark3D等模擬工具，以在設計過程的早期階段最大限度地提高真空下的功率處理能力。MtronPTI還投資了一個高空（低壓）試驗箱，以支持高功率處理射頻組件和子組件測試。海拔試驗箱的加入使MtronPTI能夠在將測試產品暴露在接近1 x 10的壓力下時調節環境試驗箱的溫度-5托。通過結合Spark3D模擬和高空測試，MtronPTI提高了任務成功的概率。
MtronPTI航天級產品符合美國國家標準協會/AIAA S-142-2016《航天器部件中預防多次放電擊穿的標準/手冊》。
注1 : MtronPTI廣泛的內部測試能力包括根據MIL-STD-202的熱沖擊、方法107根據MIL-STD-202的端子強度、方法211根據MIL-STD-202的機械沖擊、方法213根據MIL-STD-202的總泄漏測試、方法112根據MIL-STD-202的隨機振動、方法214A根據MIL-STD-202的氦氣、方法112根據MIL-STD-202的正弦振動
MtronPTI組件和子組件設計和測試能力XO5082-020SR
MtronPTI High Power Handling Space Level Component and Sub-Assemblies Design and Testing Capabilities
MtronPTI has over 125 design wins across satellite platforms and manned spacecraft. With expertise supporting LEO, MEO and GEO applications, MtronPTI has a well-established team and a proven track record to meet demanding space requirements.
With the evolving need for high-power space-level transmitters, high-power handling space-level RF components and sub-assemblies are instrumental for mission success. The performance of these devices used in orbiting satellites are significantly different compared to how they perform at sea level due to phenomena like multipaction. Some space-level applications require both continuous operation performance in outer space as well as performance during the assent to space, i.e. undergoing a pressure change from ambient to 1 x 10-5 Torr over temperature to avoid corona discharge. Understanding the capability of the high-power handling RF components and sub-assemblies during the assent to space and in orbit is critical for successful space missions. Detecting potential risks at an early stage prevents a catastrophic failure.
In addition to existing in-house testing capabilities1 for testing space level components and RF assemblies, MtronPTI has invested in simulation tools like Spark3D™ to maximize power handling capability under vacuum in the early stages of the design process. MtronPTI has also invested in a altitude (hypobaric) chamber to support high power handling RF components and sub-assemblies testing. The incorporation of an altitude test chamber enables MtronPTI to adjust the temperature of the environmental test chamber while exposing the product under test to pressure approaching 1 x 10-5 Torr. By combining Spark3D simulations and altitude testing, MtronPTI enhances the probability of mission success.
MtronPTI space-level products comply with ANSI/AIAA S-142-2016, Standard/Handbook for Multipactor Breakdown Prevention in Spacecraft Components.
Note 1 : MtronPTI’s extensive in-house test capabilities include Thermal Shock per MIL-STD-202, Method 107 • Terminal Strength per MIL-STD-202, Method 211 • Mechanical Shock per MIL-STD-202, Method 213 • Gross Leak Testing per MIL-STD-202, Method 112 • Random Vibration per MIL-STD-202, Method 214A • Fine Leak Testing – Helium per MIL-STD-202, Method 112 • Sinusoidal Vibration per MIL-STD-202, Method 201 and 204 • PIND (Particle Impact Noise Detection) per MIL-STD-202, Method 217 • Other Miscellaneous Testing including: Life, Immersion, Humidity, Barometric Pressure, Solderability • Dielectric Withstanding Voltage, Insulation Resistance, RF Testing 100 kHz to 40 GHz.
| 產品編碼 | 晶振代理商 | 型號 | 振蕩器類型 | 頻率穩定性 | 頻率（MHz） |
| XO5085-012R | MtronPTI晶振 | XO5085 | OCXO | ±100 ppb | 100MHz |
| XO5083-053R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-053V | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5084-019 | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5084-031R | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 12.8MHz |
| XO5084-057SR | MtronPTI晶振 | XO5080 | OCXO | ±29 ppb | 10MHz |
| XO5081-015R | MtronPTI晶振 | XO5080 | OCXO | ±1 ppm | 100MHz |
| XO5081-047R | MtronPTI晶振 | XO5080 | OCXO | ±0.5 ppm | 80MHz |
| XO5081-048SR | MtronPTI晶振 | XO5080 | OCXO | ±50 ppb | 40MHz |
| XO5081-062 | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5081-067R | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5081-068 | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5082-016R | MtronPTI晶振 | XO5080 | OCXO | ±280 ppb | 100MHz |
| XO5082-020SR | MtronPTI晶振 | XO5080 | OCXO | ±0.3 ppm | 100MHz |
| XO5083-020 | MtronPTI晶振 | XO5080 | OCXO晶振 | ±10 ppb | 10MHz |
| XO5083-028R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-046R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-051R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-052R | MtronPTI晶振 | XO5080 | OCXO | ±5 ppb | 10MHz |
| XO5083-059R | MtronPTI晶振 | XO5080 | OCXO | ±5 ppb | 10MHz |
| XO5083-064 | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-067SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-078SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-079SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-081R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-104R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-106R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-108R | MtronPTI晶振 | XO5080 | OCXO | ±25 ppb | 10MHz |
| XO5083-113R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-114R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-118SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5084-034SR | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5084-043R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 12.8MHz |
| XO5084-044SR | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
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